Others
1310nm DFB High Power Analog Laser Device
Features
- 1310nm direct modulation with DFB-LD as Transmitter
- Low noise, Low distortion Low threshold current
- Built-in InGaAs/PIN monitor
- High reliability,Long operation life
Applications
- Optical Transmitter of Analog Signal
- Optical Bidi Module and Optical transceivers
- Test Equipment
Absolute Maximum Ratings (Tc=25℃)
| Parameter | Symbol | Ratings | Unit | Notes |
| Reverse Voltage（LD） | Vr(LD) | 2 | V | CW |
| Forward Current（LD） | If(LD) | 100 | mA | CW |
| Reverse Voltage（MPD） | Vr(PD) | 15 | V | CW |
| Forward Current（MPD） | If(PD) | 2 | mA | CW |
| Storage Temperature | Tstg | -40~ +85 | ℃ | – |
| Operating Temperature | Topr | -20~ +70 | ℃ | |
| Lead Soldering Temperature/Time | Ts | 260/10 | ℃/S | – |
| Fiber Yield Strength | – | 1 | kgf | – |
| Fiber Bend Radius | – | 60 | mm | – |
Transmitter Optical and Electrical Characteristics (Tc=25℃)
| Parameter | Symbol | Min | Type | Max | Unit | Test Condition |
| Threshold Current | Ith | 3 | – | 15 | mA | CW |
| – | – | 50 | mA | CW,T=85℃ | ||
| Operating Voltage | Vf | – | 1.1 | 1.5 | V | – |
| Forward Current | If | 55 | – | 65 | mA | CW, Po=10mW |
| Center Wavelength | λc | 1540 | 1550 | 1560 | nm | CW, Po= Pf |
| Rise/Fall Time(20-80%) | Tr/Tf | – | 0.2 | 0.5 | nS | If=Ith, Po=Pf, 50 Ohm |
| Monitor Current | Im | 100 | – | 1000 | uA | CW, If=Ith+20mA |
| Capacitance | C | – | 10 | 15 | PF | VRD=5V, f=1MHz |
| Dark Current | Id | – | – | 100 | nA | VRD=5V |
| Spectral Width(-3dB) | Δλ | – | 0.3 | 0.5 | nm | CW, If=Ith+20mA |
| Slope Efficiency | SE | 0.18 | – | – | W/A | CW, If=Ith+20mA |
| Tracking Error | TE | -1.5 | – | 1.5 | dB | CW, If=Ith+20mA |
| Bandwidth | BW | 2 | 2.5 | – | GHz | |
| Side Mode
Suppression Ratio |
SMSR | 30 | – | – | dB | CW, Po=10mW |
| Optical Isolation | ISO | 30 | – | – | dB | — |
| Relative Intensity Noise | RIN | – | – | -130 | dB/Hz | – |
